Thus we observe an increase in the apparent band gap.

There are no available states in the band gap.

The magnitude of its band gap means that it appears coloured.

It can be shown that the energies of these states all lie within the band gap.

In contrast, a material with a large band gap is an insulator.

It is a direct band gap semiconductor with an energy of 1.65eV at room temperature.

Around the band gap, the Faraday effect shows resonance behavior.

The materials in these are semiconductors with narrow band gaps.

The current thin film technology has been limited to one frequency due to the use of single band gap devices.

The band gap could be either direct or indirect.

In general, the greater the wurtzite component, the larger the band gap.

For this to occur, energy is required, as in the semiconductor the next higher states lie above the band gap.

Below are band gap values for some selected materials.

In an insulator lies within a large band gap, far away from any states that are able to carry current.

The light must pass through the band gap.

They are said to have a non-zero band gap.

This means that the semiconductors used have dissimilar band gaps.

Size and band gap are inversely related in quantum dots.

In the case of semiconductors that will give an idea of the band gap.

Each semiconductor has different electron affinity and band gap values.

Scientist use the band gap to predict if a solid will conduct electricity.

On the other hand, for an indirect band gap, the formula is:

In a solid, the breakdown voltage is proportional to the band gap energy.

Some quantum dots are small regions of one material buried in another with a larger band gap.

This makes a current impossible in this wide band gap semiconductor.