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Zone melting is used to decrease the concentration of impurities.
Three appendices described mathematical models of the processes in zone melting.
It can be regrown into single crystals using the Czochralski or zone melting techniques.
Pfann is known for his development of zone melting which is essential to the semiconductor industry.
This article concludes by treating the slightly larger topic of temperature gradient zone melting.
Zone melting made even less sense.
Predict the segregation profile after a single zone melting pass and understand how this will change after multiple passes.
In 1962, the journal Science published a short digest of the zone melting method by Pfann.
Float-zone silicon is very pure silicon obtained by vertical zone melting.
Zone melting", a technique using a band of molten material moving through the crystal, further increased crystal purity."
For semiconductor use, further purification is carried out using zone melting, or else single crystal extraction from a melt (Czochralski process).
Calcium and tantalum impurities can be removed by vacuum remelting, distillation, amalgam formation or zone melting.
In 1958, Pfann published the first edition of his text Zone Melting with John Wiley.
In 1952, William Gardner Pfann revealed the method of zone melting which enabled semiconductor purification and level doping.
Hermann Schildknecht (1966) Zone Melting, Verlag Chemie.
It is a critical parameter for purification using zone melting, and determines how effectively an impurity can be removed using directional solidification, described by the Scheil equation.
Rhenium diboride (ReB) is a refractory compound which was first synthesized in the 1960s, using arc melting, zone melting, or optical floating zone furnaces.
A variety of heaters can be used for zone melting, with their most important characteristic being the ability to form short molten zones that move slowly and uniformly through the ingot.
Very pure boron, for use in semiconductor industry, is produced by the decomposition of diborane at high temperatures, followed by purification via zone melting or the Czochralski process.
In the zone melting techniques disks of different materials are stacked on top of others and then materials are mixed with each other when a traveling heater causes melting.
To produce pure CaB single crystals, e.g., for use as cathode material, the thus obtained CaB powder is further recrystallized and purified with the zone melting technique.
In the Western Cordillera evidence of tensional deformation indicates that crustal stretching has been associated with the emplacement of magma and volcanic activity related to subduction zone melting.
The zone melting process that Pfann is known for revolutionized engineering possibilities: "The purity that can be attained by zone refining was absolutely unprecedented in the history of materials processing."
The preparation of bulk crystalline CdSe is done by the High-Pressure Vertical Bridgman method or High-Pressure Vertical Zone Melting.
The zone melting process developed by William Gardner Pfann was used to produce pure germanium, and subsequently float-zone silicon became available when Henry Theuerer of Bell Labs adapted Pfann's method to silicon.