Thermistors are common and semiconductor junctions can also be used.

All semiconductor junction devices exhibit the effect, some to a surprising degree.

Diode laser systems based on semiconductor junctions are used for this purpose.

On the other hand, thermal runaway is a positive feedback that can destroy semiconductor junctions.

In semiconductor junctions, excessive electric current may destroy or severely weaken that device.

Each cell is composed of three semiconductor junctions stacked on top of each other.

Photovoltaic cells convert sunlight directly into electricity with a semiconductor junction such as a diode.

This makes the metal/semiconductor junction useful in varactor devices used frequently in electronics.

This is not static-electricity damage; any voltage over about 0.7V capable of delivering high current can destroy a semiconductor junction.

Current-limited tests for voltage drop across semiconductor junctions.

He made remarkable progress in his research of remote wireless signalling and was the first to use semiconductor junctions to detect radio signals.

The term is particularly applicable to is mostly semiconductor junctions, especially diode and thyristor.

The behaviour of a semiconductor junction depends crucially on the alignment of the energy bands at the interface.

Alphavoltaic power sources are devices that use a semiconductor junction to produce electrical particle from energetic alpha particles.

The dark current includes photocurrent generated by background radiation and the saturation current of the semiconductor junction.

Bose was the first to use a semiconductor junction to detect radio waves, and he invented various now-commonplace microwave components.

Depletion region (structure of semiconductor junction)

Given all this information, the designer can construct a model of the heat flow from the semiconductor junction, where the heat is generated, to the outside world.

A carrier traversing the semiconductor junction is accelerated by the reverse-bias field, and it can generate new electron-hole pairs in a collision.

In all cases, electromigration can cause changes in dimensions and parameters of the transistor gates and semiconductor junctions.

Tunneling leakage can also occur across semiconductor junctions between heavily doped P-type and N-type semiconductors.

For breakdown voltages greater than 7 volts, the semiconductor junction width is thicker and primary breakdown mechanism is an avalanche.

An IGBT used for this purpose must be rated for a high pulsed current, so as to avoid over-current damage to the semiconductor junction.

Contact between materials is responsible for such modern electrical technology as semiconductor junction devices including radio detector diodes, photocells, LEDs, and thermoelectric cells.

In electronics, a step recovery diode (SRD) is a semiconductor junction diode having the ability to generate extremely short pulses.