The following are the steps in creating a self-aligned gate:

The self-aligned gate typically involves ion implantation, another semiconductor process innovation of the 1960s.

The world's first self-aligned gate commercial integrated circuit (1968) was the Fairchild 3708, an 8-bit analog multiplexer with decoding logic, using silicon gate technology.

Bower's invention underwent much controversy when Kerwin, Klein, and Sarace argued that they were the actual inventors of the self-aligned gate transistors.

It was the only commercial process technology for the fabrication of MOS integrated circuits with self-aligned gate that was later universally adopted by the semiconductor industry.

Bower believed he had first made the self-aligned gate using aluminum as the gate and, before presentation in 1966, made the device using polysilicon as the gate.

The self-aligned gate is used to eliminate the need to align the gate electrode to the source and drain regions of a MOS transistor during the fabrication process.

In 1966, Bower and Dill presented the first publication the self-aligned gate transistor at the International Electron Device Meeting in Washington D.C..

In February 1968, Federico Faggin joined Les Vadasz's group and was put in charge of the development of a low-threshold-voltage, self-aligned gate MOS process technology.

Most notably was his induction into the National Inventors Hall of Fame in 1997 for his invention of the self-aligned gate ion implanted MOSFET.

It was also determined in a number of court cases that the vast majority of self-aligned gate FETs were made using ion implantation rather than diffusion to introduce the dopants into the source-drain regions.

That IEDM publication described the self-aligned gate transistor fabricated with both metal and polysilicon as the gate material and using both ion implantation and diffusion to form the source and drains.

With P-type doped silicon gate it would therefore be possible not only to create self-aligned gate transistors but also a low threshold voltage process by using the same silicon orientation of the high threshold voltage process.

In 1968 he moved to Palo Alto and worked at Fairchild Semiconductor, where he created the MOS Silicon Gate technology with self-aligned gate, the basis of all modern CMOS computer chips.

In electronics, a self-aligned gate is a transistor manufacturing feature whereby a refractory gate electrode region of a MOSFET transistor is used as a mask for the doping of the source and drain regions.

In 1967 John C. Sarace and collaborators at Bell Labs replaced the aluminum gate with an electrode made of vacuum-evaporated amorphous silicon and succeeded in building working self-aligned gate MOS transistors.