Typical values of the saturation current at room temperature are:

Hence it is also called as reverse saturation current.

The highest(maximum) value of the photo-current is called saturation current.

For a surface biased strongly negative so that it draws the ion saturation current, the approximation is very good.

The dark current includes photocurrent generated by background radiation and the saturation current of the semiconductor junction.

The effect of reverse saturation current on the I-V curve of a crystalline silicon solar cell are shown in the figure to the right.

In particular, the stability factor, which is a measure of the change in collector current with changes in reverse saturation current, is approximately β+1.

Physically, reverse saturation current is a measure of the "leakage" of carriers across the p-n junction in reverse bias.

The inductor is given known levels of peak current, which if chosen carefully in regards to saturation current can reduce switching losses in its magnetic core.

The saturation current, the current through the winding required to saturate the magnetic core, is given by manufacturers in the specifications for many inductors and transformers.

The ball-pen probe balances the electron saturation current to the same magnitude as that of the ion saturation current.

The net result would be the measurement of a double-probe characteristic; in other words, electron saturation current equal to the ion saturation current.

Other examples of nonlinear elements are transistors and other semiconductor devices, vacuum tubes, and iron core inductors and transformers when operated above their saturation current.

In addition, drain-induced barrier lowering increases off-state (cutoff) current and requires an increase in threshold voltage to compensate, which in turn reduces the saturation current.

The reverse saturation current, I, is not constant for a given device, but varies with temperature; usually more significantly than V, so that V typically decreases as T increases.

Note that the saturation current is not a constant for a given device; it varies with temperature; this variance is the dominant term in the temperature coefficient for a diode.

In this configuration, the inputs are completely separated and the number of inputs is limited only by the small reverse saturation current of the cut-off transistors at output logical "1".

The bias voltage is chosen to be a few times the electron temperature so that the negative electrode draws the ion saturation current, which, like the floating potential, is directly measured.

Because the biased tip configuration is floating, the positive probe can draw at most an electron current only equal in magnitude to the ion saturation current drawn by the negative probe, so we can write:

Importantly, the metal plating in this process initiates at the bottom of the grooves rather than at the top, introducing the potential for reduced reflection, more controlled metal plating and lower saturation currents from the groove region.

Due to the large variability in saturation current of JFETs, it is common to also include a source resistor (shown in the image to the right) which allows the current to be tuned down to a desired value.

This technique allows the characterization of different aspects of photovoltaic cells : open circuit voltage, transport mechanisms, external quantum efficiency, saturation currents, composition map, uniformity components, crystallographic domains, stress shifts and lifetime measurement for material quality.

The 63Ni-induced, initial ion pair distribution was therefore measured in a variety of gases with two techniques: a conventional one based on the electrical saturation current at variable interelectrode distances, and an unconventional one based on luminescence from a plastic scintillator.

I is the saturation current at zero gate-source voltage, i.e. the maximum current which can flow through the FET from drain to source at any (permissible) drain-to-source voltage (see, e. g., the I-V characteristics diagram above).

The saturation current (or scale current), more accurately, the reverse saturation current, is that part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region.