Gold and platinum are used for minority carrier lifetime control.

The physical explanation for collector current is the concentration of minority carriers in the base region.

Indeed, there is no need to remove minority carriers as with bipolar devices.

The collector current has two components, minority carriers and majority carriers.

Only small current can flows by minority carriers.

Minority carriers play an important role in bipolar transistors and solar cells.

Bipolar transistors are so named because they conduct by using both majority and minority carriers.

The experiment allows the measurement of the concentration of minority carriers.

Once the minority carrier enters the drift region, it is 'swept' across the junction and does not return.

The process through which this is done is typically known as minority carrier recombination.

Experimentally tested the intrinsic minority carrier density for silicon (J10).

C is the diffusion capacitance representing minority carrier storage in the base.

In this condition minority carrier recombination rates are linear.

In terms of the stored minority carrier charge, the diode current i is:

Past work has shown that excitons are present in comparable quantities to minority carriers even at room temperature.

Therefore, minority carrier conduction cannot be neglected for small stoichiometric deviations.

This is important as loss of minority carriers from the base to the emitter degrades analog performance.

The minority carrier diffusion constant is directly proportional to carrier mobility.

Most of the current is carried by electrons moving from emitter to collector as minority carriers in the P-type base region.

Minority carriers (holes in this case) diffuse to the attached electron donors to recombine.

Transistors require some time to turn off, due to effects such as minority carrier storage time and capacitance.

Innovative work has been done in the area of photoconductance testing of the minority carrier lifetime and other relevant physical parameters.

Majority and minority carriers.

The resulting reduction in minority carrier lifetime causes gradual loss of gain of the transistor.

The heavily doped layer acts as a current sink where excess minority carriers can quickly recombine.