extrinsic semiconductor

This is an example of an extrinsic semiconductor.

Extrinsic semiconductor have a far more complicated temperature profile.

Extrinsic semiconductors are components of many common electrical devices.

Transistors (devices that enable current switching) also make use of extrinsic semiconductors.

The electrical properties of extrinsic semiconductors make them essential components of many electronic devices.

Lightly and moderately doped semiconductors are referred to as extrinsic semiconductors.

Semiconductor doping is the process that changes an intrinsic semiconductor to an extrinsic semiconductor.

Other devices implementing the extrinsic semiconductor:

W can be treated as a conventional n-type extrinsic semiconductor with a donor level 0.06–0.08 eV below the conduction band.

Dominant carrier concentrations in an extrinsic semiconductor classify it as either an n-type or p-type semiconductor.

Field-effect transistors (FET) are another type of transistor implementing extrinsic semiconductors.

The optical absorption coefficient of lead tin telluride is typically 750 cm as compared to 50 for the extrinsic semiconductors e.g. doped Silicon.

Pure semiconductors that have been altered by the presence of dopants are known as extrinsic semiconductors [See: intrinsic semiconductor].

Tin telluride normally forms p-type semiconductor (Extrinsic semiconductor) due to tin vacancies and is a low temperature superconductor.

ASTM standard F391-96 "Standard Test Methods for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage"

Donor impurity atoms, such as boron or phosphorus in the case of silicon, can be added to the molten intrinsic material in precise amounts in order to dope the crystal, thus changing it into n-type or p-type extrinsic semiconductor.

At the hetero-junction (extrinsic semiconductor layers used as interfaces between two homo-junction materials) , the guiding principle for optical power is total internal reflection, which guides the power out at the emitting facet of LED via path which is parallel to the junction.