One very important way to increase photographic sensitivity is to manipulate the electron traps in each crystal.

The rate constants correlate with the solvated electron trap depth.

Usually, the driving force adopted is an electric field; however, electron traps and hole traps cannot be distinguished.

Where there is a dip (a so called 'electron trap'), a free electron may be attracted and trapped.

The electron trap which gives rise to the infrared band is thought to be a cavity that occurs naturally in the perfect lattice.

These dangling bonds can act as electron traps when empty and hole traps when occupied.

A second problem is the presence of "electron traps" due to grain boundaries, impurities, defects and crystal imperfections.

On the other hand, a deep electron trap or a site that facilitates recombination will compete for photoelectrons and therefore reduces the sensitivity.

If the driving force adopted is a temperature gradient, electron traps and hole traps can be distinguished by the sign of the current.

The resulting trapped charge within these minerals remains as structurally unstable electron traps within the mineral grains.

In 1945, they published three papers in the Proceedings of the Royal Society on phosphorescence and electron traps.

Two midgap electron traps labelled ELCS1 and EL2 were observed in all layers regardless of the kind of source used.

This is very often the site of shallow electron traps, such as crystalline defect (particularly edge dislocation) and silver sulfide specks created by sulfur sensitization process.

Photoelectrons migrate to a shallow electron trap site (a sensitivity site), where the electrons reduce silver ions to form a metallic silver speck.

It is concluded that the electron trap giving rise to the visible band is a vacancy which at low temperatures is radiation-produced by a two-step spur process.

Shallow electron traps are created by sulfur sensitization, introduction of a crystalline defect (edge dislocation), and incorporating a trace amount of non-silver salt as a dopant.

HIRF can be improved by incorporating dopants that create temporary deep electron traps, optimizing the degree of sulfur sensitization, introducing crystalline defects (edge dislocation).

Our analysis suggests that by defining the defect energy in terms of the molecular electron affinity, a relationship is established between the electron trap and the molecular properties of the material.

For example, in CdSe quantum dots, Cd dangling orbitals act as electron traps while Se dangling orbitals act as hole traps.

We describe a number of optical properties of a natural quartz that are related to the presence of electron traps having an optical depth of about 3 eV below the conduction band.

In choosing MOSFETs for such experiments, the aim is to keep this current as small as possible, by minimising the density of electron traps at the interface between the semiconductor and insulator.

Among the first attempts to explain the APE were few that treated the film as a single entity, such as considering the variation of sample thickness along its length or a non-uniform distribution of electron traps.

This free-carrier can migrate through the crystal lattice of silver halide, until captured by the shallow electron trap, where the electron is likely to reduce an interstitial silver ion to form an atomic silver.

Correlation of the above results with our previously published data on n type zinc doped samples indicates that the electron trap influencing the photodecay times in n samples is a single acceptor center having a capture cross section of approximately 10−16 cm2.

Since the introduction of scattered electron traps, directly cooled liquid metal anode bearings, rotating frame tubes and other modern technology the term has become misleading when used for the objective comparison of the performance of medical rotating anode X-ray tubes.