At the highest fields the drift mobility increased sharply with the applied field.

The results for the drift mobility agree with experimental data both for Ge and Si.

The resulting average drift mobility is:

The drift mobility and the Hall coefficient factor are calculated using the Kane band structure model without approximations.

Successful interpretations of photoemission spectra, contact charge exchange, and injected carrier drift mobilities verify this prediction.

Based on drift mobility measurements, it is demonstrated that the donor and acceptor components function independently as hole- and electron-hopping sites, respectively, with no electronic interaction between them.

The TOF electron photocurrents were highly dispersive and the drift mobility – temperature data indicated a thermally activated charge-transport process with a well-defined but field-dependent mobility activation energy.

TOF drift mobility measurements, as a function of temperature at various applied fields, indicated a thermally activated hole-transport process with a well-defined but field-dependent mobility activation energy, which exhibited an approximately linear field dependence, similar to the mobility activation energy reported for doped a-As2Se3.

Many experiments are required to characterize an amorphous material and hence we have presented the results for dc conductivity, photoconductivity, optical absorption, thermoelectric power, ac conductivity, and drift mobility experiments for this material. a-ZnSe is n-type, with the Fermi level near the middle of the mobility gap.