point-contact transistor

He then became interested in semiconductor physics and built the first point-contact transistor in Czechoslovakia.

The point-contact transistor had been invented.

Some characteristics of point-contact transistors differ from the later junction transistor:

A point-contact transistor was the first type of solid-state electronic transistor ever constructed.

A point-contact transistor having three emitters.

The first transistor was a point-contact transistor that measured half an inch (1.27 centimeters) in height.

Point-contact transistor having two emitters.

One early pentode transistor was developed in the early 1950s as an improvement over the point-contact transistor.

Instead, what Bardeen, Brattain, and Shockley invented in 1947 was the first point-contact transistor.

The low-current input terminal into the point-contact transistor is the emitter, while the output high current terminals are the base and collector.

Initially the only devices available were germanium point-contact transistors, less reliable than the valves they replaced but which consumed far less power.

Wartime research on p-n junctions in crystals paved the way for the invention of the point-contact transistor in 1947.

Bell immediately put the point-contact transistor into limited production at Western Electric in Allentown, Pennsylvania.

The machine used point-contact transistors, made in small quantities by STC and Mullard.

"Invention of the Point-Contact Transistor."

Within a year, Bardeen and Brittain used the element germanium to create an amplifying circuit, also called a point-contact transistor.

In his Nobel lecture, he gave full credit to Brattain and Bardeen as the inventors of the point-contact transistor.

Point-contact transistor - first transistor ever constructed (December 1947), a bipolar transistor, limited commercial use due to high cost and noise.

The spacistor was a type of transistor developed in the 1950s as an improvement over the point-contact transistor and the later alloy junction transistor.

On December 23, 1947, Bardeen and Brattain-working without Shockley-succeeded in creating a point-contact transistor that achieved amplification.

The surface-barrier transistor is a type of transistor developed by Philco in 1953 as an improvement to the alloy-junction transistor and the earlier point-contact transistor.

The proposed design would have been built with either point-contact transistors or surface barrier transistors, both likely to be soon outperformed by the then newly invented diffusion transistors.

The computer used early point-contact transistors which were the first generation of transistors, however later developments of the machine used more advanced junction transistors which offered better performance.

December 1947 was Bell Labs' "Miracle Month," when Bardeen and Brattain - working without Shockley - succeeded in creating a point-contact transistor that achieved amplification.

In 1947, researchers John Bardeen, Walter Houser Brattain, and William Shockley were trying to make a JFET when they discovered the point-contact transistor.