An example is the p-n junction diode (curve at right).

They have a lower forward voltage drop than p-n junction diodes.

A p-n junction diode is made of a crystal of semiconductor.

A point-contact diode works the same as the junction diodes described below, but their construction is simpler.

The photon-generated electron and hole are then collected for electrical power generation using a p-n junction diode.

Most diodes today are silicon junction diodes.

Laser diodes form a subset of the larger classification of semiconductor p-n junction diodes.

A well known application of this method is the approximation of the transfer function of a pn junction diode.

This article discusses the modelling of p-n junction diodes, but the techniques may be generalized to other solid state diodes.

The adjective "diffusion" is used because the original use of this term was for junction diodes, where the charge transport was via the diffusion mechanism.

Individual SWNTs can form ideal p-n junction diodes.

In a p-n junction diode, electrons and holes are the minority charge carriers in the p-region and the n-region, respectively.

They are also critical to a full analysis of p-n junction devices such as bipolar junction transistors and p-n junction diodes.

In electronics, a step recovery diode (SRD) is a semiconductor junction diode having the ability to generate extremely short pulses.

The constant voltage drop of a standard p-n junction diode is typically between 0.7 V and 1.7 V, causing significant power loss in the diode.

For power rectification from very low to very high current, semiconductor diodes of various types (junction diodes, Schottky diodes, etc.) are widely used.

The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .

The many types of diode lasers known today collectively form a subset of the larger classification of semiconductor 'p'-'n' junction diodes.

Also, because of their majority-carrier conduction mechanism, Schottky diodes can achieve greater switching speeds than p-n junction diodes, making them appropriate to rectify high-frequency signals.

PIN diodes are much faster and more sensitive than p-n junction diodes, and hence are often used for optical communications and in lighting regulation.

For example, the internal structure of an NPN bipolar transistor resembles two PN junction diodes connected together by a common anode.

Another type of junction diode, the Schottky diode, is formed from a metal-semiconductor junction rather than a p-n junction, which reduces capacitance and increases switching speed.

The first generation photovoltaic consists of a large-area, single layer p-n junction diode, which is capable of generating usable electrical energy from light sources with the wavelengths of sunlight.

A clipping circuit consists of linear elements like resistors and non-linear elements like junction diodes or transistors, but it does not contain energy-storage elements like capacitors.

The first IMPATT oscillation was obtained from a simple silicon p-n junction diode biased into a reverse avalanche break down and mounted in a microwave cavity.