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In general, resistivity of intrinsic semiconductors decreases with increasing temperature.
An intrinsic semiconductor is made up of one pure element or pure compound.
The conductivity of intrinsic semiconductors is strongly dependent on the band gap.
During doping, impurity atoms are introduced to an intrinsic semiconductor.
At room temperature, the conductivity of intrinsic semiconductors is relatively low because there are very few charge carriers available.
This provides excess holes to the intrinsic semiconductor.
The current which will flow in an intrinsic semiconductor consists of both electron and hole current.
The Fermi level of an intrinsic semiconductor is exactly in the middle of the band gap.
In an intrinsic semiconductor under thermal equilibrium, the concentration of electrons and holes is equivalent.
The electrons and holes recombine in the intrinsic semiconductor emitting photons.
An intrinsic semiconductor has its own charge carriers and is not an efficient semiconductor, for example, silicon.
N-type semiconductors are created by doping an intrinsic semiconductor with donor impurities.
It is a n-type semiconductor intrinsic semiconductor.
In an intrinsic semiconductor, which does not contain any impurity, the concentrations of both types of carriers are ideally equal.
The electrical conductivity of intrinsic semiconductors can be due to crystallographic defects or electron excitation.
Semiconductor doping is the process that changes an intrinsic semiconductor to an extrinsic semiconductor.
Impurity atoms are atoms of a different element than the atoms of the intrinsic semiconductor.
Impurity atoms are classified as donor or acceptor atoms based on the effect they have on the intrinsic semiconductor.
Impurity atoms act as either donors or acceptors to the intrinsic semiconductor, changing the electron and hole concentrations of the semiconductor.
Donor impurity atoms have more valence electrons than the atoms they replace in the intrinsic semiconductor lattice.
For unexcited, intrinsic semiconductors one can determine the complex permittivity or THz-absorption coefficient and refractive index, respectively.
Pure semiconductors that have been altered by the presence of dopants are known as extrinsic semiconductors [See: intrinsic semiconductor].
The concentration of dopant introduced to an intrinsic semiconductor determines its concentration and indirectly affects many of its electrical properties.
At higher temperatures it will behave like intrinsic semiconductors as the carriers from the donors/acceptors become insignificant compared to the thermally generated carriers.
As seen in Figure 1 (below), the Fermi energy of n-type semiconductors is elevated from that of the corresponding un-doped intrinsic semiconductor.
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