indium phosphide

The new laser is very fast because it uses very pure indium phosphide crystals.

Extensive site on the physical properties of indium phosphide (Ioffe institute)

The material of choice for SRLs is indium phosphide.

Or the gallium indium phosphide.

Indium phosphide is prepared from the reaction of white phosphorus and indium iodide at 400 C.

Mostly used substrate is indium phosphide (InP).

Longer wavelength devices, from 1300 nm to 2000 nm, have been demonstrated with at least the active region made of indium phosphide.

Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.

The GaInAs device is normally grown on an indium phosphide (InP) substrate.

Indium gallium phosphide is an alloy of indium phosphide and gallium phosphide.

Some indium compounds such as indium antimonide, indium phosphide, and indium nitride are semiconductors with useful properties.

In the middle and late 1980s, the development of indium phosphide semiconductors and indium tin oxide thin films for liquid crystal displays (LCD) aroused much interest.

The breakthrough was achieved by bonding a layer of light-emitting indium phosphide onto the surface of a standard silicon chip etched with special channels that act as light-wave guides.

While the researchers at Intel and Santa Barbara are betting on indium phosphide, Japanese scientists in a related effort are pursuing a different material, the chemical element erbium.