hafnium oxide

On top of this are alternating layers of silicon dioxide and hafnium oxide.

The addition of silicon to hafnium oxide increases the band gap, while decreasing the dielectric constant.

TSC has also been applied to hafnium oxide.

Even with the introduction of new materials like hafnium oxides, NBTI remains.

For example, the latest 45nm Intel processor incorporates a hafnium oxide based material for the gate and a metal electrode.

To keep it going, the chip scientists are turning to hafnium oxide instead of silicon oxide to increase the power CPUs.

Thin films of hafnium oxides, used in modern semiconductor devices, are often deposited with an amorphous structure (commonly by atomic layer deposition).

Commonly used high-k gate dielectrics include hafnium oxide and more recently aluminum oxide for Gate-all-around devices.

Hafnium Oxide Similar to zirconium oxide, found as impurity in zirconium ores.

Alternate high-k gate dielectrics like Hafnium oxide, Hafnium dioxide and Aluminum oxides are also proposed as a radiation dosimeters.

In recent years, hafnium oxide (as well as doped and oxygen-deficient hafnium oxide) attracts additional interest as a possible candidate for resistive-switching memories.

It also values derived products issued from the zirconium process such as hafnium salt, magnesium and silicium, as well as zirconium and hafnium oxides and highly pure hafnium.

Metal gates were re-introduced at the time when SiO dielectrics are being replaced by high-k dielectrics like Hafnium oxide as gate oxide in the mainstream CMOS technology.

Possible benefits of the amorphous structure have led researchers to alloy hafnium oxide with silicon (forming hafnium silicates) or aluminium, which were found to increase the crystallization temperature of hafnium oxide.