The foreign atoms can be introduced only into the material with the high floor.

They will be able to move around without being slowed by attractions from the foreign atoms, which remain on the upper floor.

In a semiconductor, interference comes not from furniture but from certain foreign atoms.

This technology is applied for doping the surfaces of materials with foreign atoms or to produce defects in semiconductors.

To form a current in semiconductors, engineers introduce foreign atoms that carry more electrons than the atoms of the semiconductor material.

The interlayer e cxchange coupling depends very strongly on the magnetic state of the foreign atoms within the spacer.

For foreign atoms with no long-range ferromagnetic order the exchange coupling is mainly affected by the 3d valence band electrons.

Using a quasi-three-dimensional crystal model, we investigate the localized electronic states generated by a crystal surface covered by foreign atoms.

The allotropes of carbon, including graphite, can accept foreign atoms or compounds into their structures via substitution, intercalation or doping.

The theory of pressure broadening by foreign atoms is formulated within the framework of an adiabatic representation (which we distinguish from the adiabatic approximation).

Silicon and germanium are known 'pure' semiconductors, or elements that can be transformed into conducting materials after foreign atoms are added to their crystal structure in a process called 'doping'.

Interaction Between Charge Carriers and Foreign Atoms in Superfluid Helium: From Bound States to Unusual Transport.

Foreign atoms that are isoelectronic with the spacer atoms modify the strength of the exchange coupling only due to lattice relaxations that are associated with their atomic size.

If there is a foreign atom embedded in the metal or semiconductor, a so-called impurity, the electrons that move freely through the solid are scattered by the deviating potential of the impurity.

Though his discoveries found no immediate technical use, his explanation of how a foreign atom invades and distorts the symmetrical structure of a crystal was basic to the electronic interactions in today's computer memory systems.

The purpose of these studies was to determine the effect of foreign atoms inside a nonmagnetic spacer on the direct interlayer exchange coupling between the outside Fe layers mediated by the valence electrons of the Cu spacer.

What we need is not so much a point irregularity such as a foreign atom, because that could only facilitate movement at one point, but rather a line defect which will allow the army of molecules, as it were, to sweep forward on a broad front.

It will be shown that the local electron potential of the foreign atoms affects the spin transport across the spacer and is chiefly responsible for the observed behavior of the interlayer exchange coupling in Fe/Cu/XcCu1 - c/Cu/Fe.

One way to draw off the electrons is to introduce a few foreign atoms (typically, boron and phosphorus) into the lattice in such a way as to create a permanent positively charged and negatively charged regions within the material, separated by a thin zone known as a "junction."