The term Mott insulator is also named for him.

Experience in the field of strongly correlated electronic systems and Mott insulators would be an advantage.

Most (though not all, see Mott insulator) insulators have a large band gap.

Mott insulators are of growing interest in advanced physics research, and are not yet fully understood.

Electron-correlation-driven localization of the t electrons exceeds the critical value, leading to the Mott insulator.

One of the simplest theories of Mott insulators is the 1963 Hubbard model.

The undoped 'parent' or 'mother' compounds are Mott insulators with long-range antiferromagnetic order at low enough temperature.

Electrides are paramagnetic and Mott insulators.

Thus, mottism accounts for all of the properties of Mott insulators that cannot be attributed simply to antiferromagnetism.

In general, Mott insulators occur when the repulsive Coulomb potential U is large enough to create an energy gap.

However, they are poor metals rather than Mott insulators and have five bands at the Fermi surface rather than one.

The physics of Mott insulators is described by the repulsive Hubbard model Hamiltonian:

Mottism denotes the additional ingredient, aside from antiferromagnetic ordering, which is necessary to fully describe a Mott Insulator.

Mott insulators are a class of materials that should conduct electricity under conventional band theories, but are insulators when measured (particularly at low temperatures).

In the Mott insulator phase, atoms will be trapped in the potential minima and cannot move freely, which is similar to the electrons in an insulator.

The crossover from a metal to a Mott insulator as U is increased can be predicted within the so-called Dynamical Mean Field Theory.

Recent research on the JCH model include the quantum phase transition, in which the Mott insulator phase and superfluid phase are identified.

Anderson observed in his 1987 paper that the origins of superconductivity in doped cuprates was in the Mott insulator nature of crystalline copper oxide.

There are a number of properties of Mott insulators, derived from both experimental and theoretical observations, which cannot be attributed to antiferromagnetic ordering and thus constitute mottism.

The importance of this constant is in its use as an indicator of quantum phase transitions-- specifically in models with metal-insulator transitions such as Mott insulators.

One of DMFT's main successes is to describe the phase transition between a metal and a Mott insulator when the strength of electronic correlations is increased.

If each site is only occupied by a single electron the lower band is completely filled and the upper band completely empty, the system thus a so called Mott insulator.

Unlike Mott insulators, where the insulating properties arise from electrons hopping between unit cells, the electrons in charge transfer insulators move between atoms within the unit cell.

The Hubbard model is based on the tight-binding approximation, and can explain conductor-insulator transitions in Mott insulators such as transition metal oxides by the presence of repulsive Coulombic interactions between electrons.

Performing this transformation adiabatically while keeping the atoms in the Mott insulator regime, it is possible to go from a low entropy positive temperature state to a low entropy negative temperature state.