The stresses caused by an edge dislocation are complex due to its inherent asymmetry.

In an edge dislocation, the Burgers vector is perpendicular to the line direction.

A pure edge dislocation is shown at the island interface to illustrate the relieved structure of the cluster.

Bending of atomic planes around an edge dislocation (whose line runs perpendicular to the diagram).

Nonlinear computation of anisotropic elastic fields about straight edge dislocations.

Dislocation climb allows an edge dislocation to move perpendicular to its slip plane.

The edge dislocations will rearrange themselves into tilt boundaries, a simple example of a low-angle grain boundary.

Edge dislocations are caused by the termination of a plane of atoms in the middle of a crystal.

Edge dislocations form the edge of an extra layer of atoms inside the crystal lattice.

The simplest case is that of an array of edge dislocations of identical Burger's vector.

In the case of an edge dislocation, a half plane of atoms is wedged between two planes of atoms.

This article outlines a model for calculating the localized electronic states of a edge dislocation in α-Fe and in Mo.

Crystal structures can be dislocated by sheer, fault or edge dislocation which involves the sliding of crystals along a sheer plane.

For an edge dislocation, the dislocation and the Burgers vector are perpendicular, so there is only one plane in which the dislocation can slip.

An edge dislocation is a defect where an extra half-plane of atoms is introduced mid way through the crystal, distorting nearby planes of atoms.

This is very often the site of shallow electron traps, such as crystalline defect (particularly edge dislocation) and silver sulfide specks created by sulfur sensitization process.

Shallow electron traps are created by sulfur sensitization, introduction of a crystalline defect (edge dislocation), and incorporating a trace amount of non-silver salt as a dopant.

HIRF can be improved by incorporating dopants that create temporary deep electron traps, optimizing the degree of sulfur sensitization, introducing crystalline defects (edge dislocation).