After this point, only silver ion vacancy defects, which actually increase by several orders of magnitude, are prominent.

If there is an atom missing from the array, a vacancy defect is formed.

In non-ionic crystals it means a lattice vacancy defect.

Vacancy defects are lattice sites which would be occupied in a perfect crystal, but are vacant.

It creates a vacancy defect at its original site and an interstitial defect at its new location.

Most defects, such as interstitial silver ion concentration and surface kinks are inversely proportional to crystal size, although vacancy defects are directly proportional.

For solids containing free electrons (such as metals or semiconductors), the implanted positrons annihilate rapidly unless voids such as vacancy defects are present.

It is a vacancy defect (due to missing ions) and also a stoichiometric defect, as the ratio of the number of cations and anions remains the same.

If the transferred momentum of atomic recoil is enough to disrupt the crystal lattice of the material, a vacancy defect is formed otherwise a phonon is generated.

GeSbTe has a glass transition temperature of around 100 C. GeSbTe also has many vacancy defects in the lattice, of 20 to 25% depending on the specific GeSbTe compound.