The depletion region is free of carriers and has a resistance similar to silicon.

Below certain width the charge carriers can tunnel through the depletion region.

A more complete analysis would take into account that there are still some carriers near the edges of the depletion region.

The width of the depletion region grows larger with higher voltage.

At very high biases, the depletion region breaks down.

This structure suggests that there is no depletion region to separate the device from the substrate.

The charge generation rate is related to specific crystallographic defects within the depletion region.

The shape of the depletion region creates a wider channel, allowing more current to flow through it.

Hence, electrons can easily tunnel through the depletion region.

But only those electron-hole pairs generated in and near the depletion region contribute to current generation.

A junction is formed between the p and n regions which is also called a depletion region.

It is called Depletion region due to the absence of charge carriers (electrons and holes in this case).

The depletion region with its ionized charges inside behaves like a capacitor.

It also assumes that the R-G current in the depletion region is insignificant.

A depletion region forms instantaneously across a p-n junction.

The width of the depletion region is governed by the principle of charge neutrality.

Therefore, the depletion region widens, and does so increasingly with increasing reverse-bias voltage.

With increased doping level of the semiconductor the width of the depletion region drops.

The only elements left in the depletion region are ionized donor or acceptor impurities.

This is called a "depletion region".

The current is caused by electron hole pairs being swept across the electric field of the depletion region when generated thermally near the edge.

When the electric field is sufficient to arrest further transfer of holes and electrons, the depletion region has reached its equilibrium dimensions.

Another example of a depletion region occurs in the MOS capacitor.

As noted above, this photo voltage also forward biases the junction, and so reduces the pre-existing field in the depletion region.

However, the width of the depletion region (called the depletion width) cannot grow without limit.