Screws which do exist cannot cross-slip across stacking faults, even under high stresses.

In the study, however, the researchers were able to strengthen the material by introducing "nano-spaced stacking faults."

Theory predicted the (110) slip associated with particularly favorable stacking faults and confirmed by later experiments.

Stacking faults carry a given formation enthalpy per unit area; this is called stacking-fault energy.

The common example of stacking faults is portrayed as a comparison of close-packed structures.

The researchers were able to introduce the nano-spaced stacking faults to the alloy using conventional "hot rolling" technology that is widely used by industry.

Stacking faults occur in a number of crystal structures, but the common example is in close-packed structures.

The possible role of stacking faults is discussed in some problems of glide and twinning of cubic metals, especially at low temperatures.

Frenkel pairs, ordered or disordered dislocation loops, stacking faults, or amorphous zones.

Stacking faults along the crystallographic c-axis and one-dimensional disorder are prevalent features found in SiC crystals.

Finally, growth defects, specifically stacking faults and threading dislocations, were present in qualitatively varying degrees in the films studied.

Lower SFE materials display wider stacking faults and have more difficulties for cross-slip and climb.

Thus, syntactic intergrowth and defects such as stacking faults occur during synthesis and it becomes difficult to isolate a single superconducting phase.

Gan and co-workers then assessed how stacking faults and the ratio of cobalt to palladium atoms affected this anisotropy.

Shockley Partial Dislocations generally refer to a pair of dislocations which can lead to the presence of stacking faults.

However, films of all crystallographic phases contained a large density of planar defects such as twins, stacking faults, and low-angle grain boundaries.

Ultrastrong Mg Alloy via Nano-spaced Stacking Faults.

This model explains the formation of domains of different polytype structure by a repetition of the production of stacking faults by split dislocations.

This etchant reveals clearly defined oxidation-induced stacking faults, dislocations, swirls and striations with minimum surface roughness or extraneous pitting.

First-principles calculations of the magnetic anisotropic constants of Co-Pd multilayers: Effect of stacking faults.

This is because the SOS process results in the formation of dislocations, twinning and stacking faults from crystal lattice disparities between the sapphire and silicon.

However, if the metal has a high number of stacking faults (a difference in stacking sequence between atomic planes) it will be less apt to cross-slip at the dislocations.