Usually it is a metal-semiconductor junction between a metal lead and semiconductor material.

In this context, the metal-semiconductor junction is known as a "Schottky (rectifying) contact'".

A Schottky diode is a single metal-semiconductor junction, used for its rectifying properties.

Detectors based on metal-semiconductor junctions (with germanium as the semiconductor) have been integrated into silicon waveguides.

In the above diagrams, contact between the metal wires and the semiconductor material also creates metal-semiconductor junctions called Schottky diodes.

Tersoff proposed a model based on more familiar metal-semiconductor junctions where the conduction band offset is given by the difference in Schottky barrier height.

The first theory that predicted the correct direction of rectification of the metal-semiconductor junction was given by Nevill Mott in 1939.

A metal-semiconductor junction is formed between a metal and a semiconductor, creating a Schottky barrier (instead of a semiconductor-semiconductor junction as in conventional diodes).

For a metal-semiconductor junction this is known as the Schottky-Mott rule and gives poor accuracy, due to a phenomenon known as Fermi level pinning.

The tip of the wire contacting the surface of the crystal formed a crude and unstable point-contact metal-semiconductor junction, forming a Schottky barrier diode.

A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal-semiconductor junction.

Walter H. Schottky and Nevill Francis Mott developed models of the potential barrier and of the characteristics of a metal-semiconductor junction.

The rectifying metal-semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.

Another type of junction diode, the Schottky diode, is formed from a metal-semiconductor junction rather than a p-n junction, which reduces capacitance and increases switching speed.

In the case of a metal-semiconductor junction, this is called a Schottky barrier; in the case of the metal-vacuum interface, this is sometimes called a Schottky-Nordheim barrier.

Metal-semiconductor FETs (MESFETs) are JFETs in which the reverse biased p-n junction is replaced by a metal-semiconductor junction.

But, in practice, surface impurities within the part of the semiconductor that touches the metal terminals will greatly reduce the width of those depletion layers to such an extent that the metal-semiconductor junctions do not act as diodes.

When in the MIMB state, the interface between the Pt electrode and the Ta2O5-x forms a metal-semiconductor junction known as a Schottky barrier, while the MMBM state forms an ohmic contact.

Not all metal-semiconductor junctions form a rectifying Schottky barrier; a metal-semiconductor junction that does not rectify current, perhaps due to its Schottky barrier being too low, is called an ohmic contact.

Like the modern Schottky transistor, it offered much higher speed than earlier transistors and used metal-semiconductor junctions (instead of semiconductor-semiconductor junctions), but unlike the schottky transistor, both junctions were metal-semiconductor junctions.

The technique uses a metal-semiconductor junction (Schottky barrier) or a p-n junction or a MOSFET to create a depletion region, a region which is empty of conducting electrons and holes, but may contain ionized donors and electrically active defects or traps.

The current flows from the first probe, into the metal contact, across the metal-semiconductor junction, through the sheet of semiconductor, across the metal-semiconductor junction again (except this time in the other direction), into the second contact, and from there into the second probe and into the external circuit to be measured by an ammeter.